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STP10NK60Z
$ 0.772
STP10NK60Z Datasheet PDF (19 Pages)
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STP10NK60Z Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
10.0 A
Case/Package
TO-220-3
Power Rating
115 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.75 Ω
Polarity
N-Channel
Power Dissipation
115 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
20 ns
Input Capacitance (Ciss)
1370pF @25V(Vds)
Input Power (Max)
115 W
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
115000 mW

STP10NK60Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STP10NK60Z Documents

ST Microelectronics
19 Pages / 0.39 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
24 Pages / 0.91 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.12 MByte

STP10NK60 Documents

ST Microelectronics
Power MOSFET, N Channel, 10A, 600V, 0.65Ω, 10V, 3.75V
ST Microelectronics
N-CHANNEL 600V - 0.65Ω - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
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