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Part Datasheet Search > MOSFETs > ST Microelectronics > STP10NM60ND Datasheet PDF
STP10NM60ND
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STP10NM60ND Datasheet PDF (19 Pages)
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STP10NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.57 Ω
Polarity
N-Channel
Power Dissipation
70 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
10 ns
Input Capacitance (Ciss)
577pF @50V(Vds)
Input Power (Max)
70 W
Fall Time
9.8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
70W (Tc)

STP10NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STP10NM60ND Documents

ST Microelectronics
19 Pages / 1.19 MByte
ST Microelectronics
21 Pages / 1.1 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte

STP10NM60 Documents

ST Microelectronics
N-channel 600V, 0.53Ω, 10A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
ST Microelectronics
N-channel 600V, 0.57 8A, Dpak, To-220, To-220fp , Fdmeshtm Ii Power Mosfet
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