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Part Datasheet Search > MOSFETs > ST Microelectronics > STP110N8F7 Datasheet PDF
STP110N8F7
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STP110N8F7 Datasheet PDF (14 Pages)
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STP110N8F7 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
7.5 mΩ
Polarity
N-CH
Power Dissipation
170 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
80 V
Breakdown Voltage (Drain to Source)
80 V
Continuous Drain Current (Ids)
80A
Rise Time
95 ns
Input Capacitance (Ciss)
3435pF @40V(Vds)
Fall Time
32 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
170W (Tc)

STP110N8F7 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

STP110N8F7 Documents

ST Microelectronics
14 Pages / 0.55 MByte
ST Microelectronics
24 Pages / 1.51 MByte
ST Microelectronics
20 Pages / 1.45 MByte
ST Microelectronics
13 Pages / 0 MByte

STP110N8 Documents

ST Microelectronics
TO-220 N-CH 80V 110A
ST Microelectronics
TO-220 N-CH 80V 80A
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