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Part Datasheet Search > MOSFETs > ST Microelectronics > STP11NM80 Datasheet PDF
STP11NM80
$ 2.55

STP11NM80 Datasheet PDF - ST Microelectronics

Manufacturer:
ST Microelectronics
Category:
MOSFETs
Case Package:
TO-220-3
Description:
TO-220 N-CH 800V 11A
Pictures:
3D Model
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Product Pictures
Documentation:
STP11NM80 Datasheet (22 Pages)
Package Outline Dimension on10 Page11 Page12 Page13 Page14 Page
STP11NM80 Datasheet PDF (22 Pages)
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STP11NM80 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
800 V
Current Rating
11.0 A
Case/Package
TO-220-3
Power Rating
150 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
400 mΩ
Polarity
N-Channel
Power Dissipation
150 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
11.0 A
Rise Time
17 ns
Input Capacitance (Ciss)
1630pF @25V(Vds)
Input Power (Max)
150 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
150W (Tc)
View Datasheet >

STP11NM80 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)
View Datasheet >

STP11NM80 Documents

STP11NM80 Datasheet
ST Microelectronics
22 Pages / 0.88 MByte
STP11NM80 Other Datasheet PDF
ST Microelectronics
20 Pages / 2.6 MByte
STP11NM80 Notice File
ST Microelectronics
4 Pages / 0.01 MByte
STP11NM80 Other References
ST Microelectronics
1 Pages / 0.12 MByte

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