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STP12NM50FD
$ 0.196
STP12NM50FD Datasheet PDF (18 Pages)
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STP12NM50FD Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
500 V
Current Rating
12.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
400 mΩ
Polarity
N-Channel
Power Dissipation
160 W
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
10 ns
Input Capacitance (Ciss)
1000pF @25V(Vds)
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
160W (Tc)

STP12NM50FD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

STP12NM50FD Documents

ST Microelectronics
18 Pages / 0.47 MByte
ST Microelectronics
19 Pages / 0.44 MByte

STP12NM50 Documents

ST Microelectronics
N-CHANNEL 500V 0.3Ω 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
ST Microelectronics
TO-220FP N-CH 500V 12A
ST Microelectronics
TO-220 N-CH 500V 11A
ST Microelectronics
TO-220FP N-CH 500V 12A
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TO-220 N-CH 500V 12A
ST Microelectronics
N-channel 550V @ tjmax \- 0.30Ω \- 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET
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