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Part Datasheet Search > MOSFETs > ST Microelectronics > STP12NM50FDFP Datasheet PDF
STP12NM50FDFP
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STP12NM50FDFP Datasheet PDF (18 Pages)
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STP12NM50FDFP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
400 mΩ
Polarity
N-Channel
Power Dissipation
35 W
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
10 ns
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃

STP12NM50FDFP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.3 mm

STP12NM50FDFP Documents

ST Microelectronics
18 Pages / 0.45 MByte

STP12NM50 Documents

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