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Part Datasheet Search > MOSFETs > ST Microelectronics > STP18NM60N Datasheet PDF
STP18NM60N
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STP18NM60N Datasheet PDF (21 Pages)
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STP18NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.26 Ω
Polarity
N-Channel
Power Dissipation
110 W
Threshold Voltage
3 V
Input Capacitance
1000 pF
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Rise Time
15 ns
Input Capacitance (Ciss)
1000pF @50V(Vds)
Input Power (Max)
110 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

STP18NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STP18NM60N Documents

ST Microelectronics
21 Pages / 1.14 MByte
ST Microelectronics
4 Pages / 0.01 MByte

STP18NM60 Documents

ST Microelectronics
STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13A, 600V, 0.26Ω, 10V, 3V
ST Microelectronics
N-channel 600V, 0.25Ω typ., 13A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
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