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Part Datasheet Search > MOSFETs > ST Microelectronics > STP18NM60ND Datasheet PDF
STP18NM60ND
$ 3.645

STP18NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
130 W
Input Capacitance
1030 pF
Drain to Source Voltage (Vds)
600 V
Rise Time
15.5 ns
Input Capacitance (Ciss)
1030pF @50V(Vds)
Input Power (Max)
130 W
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

STP18NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
150℃ (TJ)

STP18NM60ND Documents

ST Microelectronics
22 Pages / 1.38 MByte
ST Microelectronics
23 Pages / 1.36 MByte
ST Microelectronics
22 Pages / 1.38 MByte

STP18NM60 Documents

ST Microelectronics
STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13A, 600V, 0.26Ω, 10V, 3V
ST Microelectronics
N-channel 600V, 0.25Ω typ., 13A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
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