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STP19N06L Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-220

Description:

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

Pictures:

3D Model

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Product Pictures

Documentation:

STP19N06L Datasheet (7 Pages)

STP19N06L Datasheet PDF (7 Pages)

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STP19N06L Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-220

Polarity

N-Channel

Power Dissipation

80 W

Breakdown Voltage (Drain to Source)

60.0 V

Continuous Drain Current (Ids)

19.0 A

Rise Time

165 ns

Fall Time

95 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-65 ℃

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STP19N06L Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

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STP19N06L Environmental

STP19N06L Documents

STP19N06L Datasheet

ST Microelectronics

7 Pages / 0.24 MByte

STP19N06 Documents

STP19N06 Datasheet PDF

ST Microelectronics

TO-220 N-CH 60V 19A

STP19N06L Datasheet PDF

ST Microelectronics

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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