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Part Datasheet Search > MOSFETs > ST Microelectronics > STP21N65M5 Datasheet PDF
STP21N65M5
$ 2.324
STP21N65M5 Datasheet PDF (22 Pages)
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STP21N65M5 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Input Capacitance
1950 pF
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Continuous Drain Current (Ids)
17A
Rise Time
10 ns
Input Capacitance (Ciss)
1950pF @100V(Vds)
Input Power (Max)
125 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125W (Tc)

STP21N65M5 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
150℃ (TJ)

STP21N65M5 Documents

ST Microelectronics
22 Pages / 1.4 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte

STP21N65 Documents

ST Microelectronics
TO-220 N-CH 650V 17A
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