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Part Datasheet Search > MOSFETs > ST Microelectronics > STP25NM60ND Datasheet PDF
STP25NM60ND
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STP25NM60ND Datasheet PDF (21 Pages)
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STP25NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.13 Ω
Polarity
N-Channel
Power Dissipation
160 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
30 ns
Input Capacitance (Ciss)
2400pF @50V(Vds)
Input Power (Max)
160 W
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
160W (Tc)

STP25NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
150℃ (TJ)

STP25NM60ND Documents

ST Microelectronics
21 Pages / 0.63 MByte
ST Microelectronics
15 Pages / 0.29 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte

STP25NM60 Documents

ST Microelectronics
N-channel 600V, 0.13Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
ST Microelectronics
Trans MOSFET N-CH 600V 21A 3Pin(3+Tab) TO-220 Tube
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