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STP30NM60ND
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STP30NM60ND Datasheet PDF (18 Pages)
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STP30NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
190W (Tc)
Drain to Source Voltage (Vds)
600 V
Rise Time
50 ns
Input Capacitance (Ciss)
2800pF @50V(Vds)
Fall Time
75 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
190W (Tc)

STP30NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
150℃ (TJ)

STP30NM60ND Documents

ST Microelectronics
18 Pages / 0.77 MByte

STP30NM60 Documents

ST Microelectronics
N-channel 600V, 0.11Ω, 25A FDmesh™2; II Power MOSFET (with fast diode) TO-220, TO-220FP, D²PAK, I²PAK, TO-247
ST Microelectronics
TO-220 N-CH 600V 25A
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