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Part Datasheet Search > MOSFETs > ST Microelectronics > STP34NM60ND Datasheet PDF
STP34NM60ND
$ 6.425
STP34NM60ND Datasheet PDF (22 Pages)
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STP34NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.097 Ω
Polarity
N-Channel
Power Dissipation
210 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
29A
Rise Time
53.4 ns
Input Capacitance (Ciss)
2785pF @50V(Vds)
Input Power (Max)
210 W
Fall Time
61.8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
190W (Tc)

STP34NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
150℃ (TJ)

STP34NM60ND Documents

ST Microelectronics
22 Pages / 1.23 MByte
ST Microelectronics
21 Pages / 1.12 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
17 Pages / 1.33 MByte
ST Microelectronics
4 Pages / 0.01 MByte

STP34NM60 Documents

ST Microelectronics
STMICROELECTRONICS STP34NM60N Power MOSFET, N Channel, 29A, 600V, 0.092Ω, 10V, 3V
ST Microelectronics
TO-220 N-CH 600V 29A
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