STP60NF06L Datasheet PDF - ST Microelectronics

●The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application and intended for any application with low gate charge drive.

● Exceptional dv/dt capability

● Avalanche tested

● Drain to source voltage (Vds) of 60V

● Gate to source voltage of ±15V

● Continuous drain current (Id) of 60A

● Power dissipation (Pd) of 110W

● Low on state resistance of 12mohm at Vgs 10V

● Operating junction temperature range from -65°C to 175°C