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Part Datasheet Search > MOSFETs > ST Microelectronics > STP8NM60 Datasheet PDF
STP8NM60
$ 1.37
STP8NM60 Datasheet PDF (18 Pages)
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STP8NM60 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
650 V
Current Rating
8.00 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
900 mΩ
Polarity
N-Channel
Power Dissipation
100 W
Threshold Voltage
4 V
Input Capacitance
400 pF
Gate Charge
18.0 nC
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
8.00 A
Rise Time
10.0 ns
Input Capacitance (Ciss)
400pF @25V(Vds)
Input Power (Max)
100 W
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
100W (Tc)

STP8NM60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

STP8NM60 Documents

ST Microelectronics
18 Pages / 0.54 MByte
ST Microelectronics
1 Pages / 0.12 MByte

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