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STP8NM60ND Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-220-3

Description:

N-channel 600V, 0.59Ω, 7A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220

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Documentation:

STP8NM60ND Datasheet (17 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STP8NM60ND Datasheet PDF (17 Pages)

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STP8NM60ND Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-220-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

700 mΩ

Power Dissipation

70 W

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Rise Time

22 ns

Input Capacitance (Ciss)

560pF @50V(Vds)

Fall Time

22 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

70W (Tc)

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STP8NM60ND Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Size-Length

10.4 mm

Size-Width

4.6 mm

Size-Height

9.15 mm

Operating Temperature

150℃ (TJ)

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STP8NM60ND Environmental

STP8NM60ND Function Overview

STP8NM60ND Documents

STP8NM60ND Datasheet

ST Microelectronics

17 Pages / 0.7 MByte

STP8NM60ND Other Datasheet PDF

ST Microelectronics

20 Pages / 1.17 MByte

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STP8NM60ND Datasheet PDF

ST Microelectronics

N-channel 600V, 0.59Ω, 7A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220

STP8NM60FP Datasheet PDF

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TO-220FP N-CH 600V 8A

STP8NM60D Datasheet PDF

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TO-220 N-CH 600V 8A

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