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Part Datasheet Search > High Voltage MOS > ST Microelectronics > STP9NK70Z Datasheet PDF
STP9NK70Z
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STP9NK70Z Datasheet PDF (14 Pages)
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STP9NK70Z Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
700 V
Current Rating
7.50 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1 Ω
Polarity
N-Channel
Power Dissipation
115 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
700 V
Breakdown Voltage (Drain to Source)
700 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
4.00 A
Rise Time
17 ns
Input Capacitance (Ciss)
1370pF @25V(Vds)
Input Power (Max)
115 W
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
115W (Tc)

STP9NK70Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
16.4 mm
Operating Temperature
-55℃ ~ 150℃

STP9NK70Z Documents

ST Microelectronics
14 Pages / 0.65 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte

STP9NK70 Documents

ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
TO-220 N-CH 700V 7.5A
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