STPSC20065-Y Datasheet PDF - ST Microelectronics

●The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

●Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.

●Key Features

● No reverse recovery charge in application current range

● Switching behavior independent of temperature

● Dedicated to PFC applications

● High forward surge capability

● ECOPACK®2 compliant component

● AEC-Q101 qualified

● PPAP capable

● Operating Tj from -40 °C to 175 °C