STR2550 Datasheet PDF - ST Microelectronics

●Compared to other transistors, the PNP STR2550 general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 7 V.