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Part Datasheet Search > MOSFETs > ST Microelectronics > STS4DPF30L Datasheet PDF
STS4DPF30L
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STS4DPF30L Datasheet PDF (6 Pages)
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STS4DPF30L Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-4.00 A
Case/Package
SOIC-8
Number of Channels
2 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.07 Ω
Polarity
P-Channel
Power Dissipation
2 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Breakdown Voltage (Gate to Source)
±16.0 V
Continuous Drain Current (Ids)
4.00 A
Rise Time
35 ns
Input Capacitance (Ciss)
1350pF @25V(Vds)
Input Power (Max)
2 W
Fall Time
35 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

STS4DPF30L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.25 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STS4DPF30L Documents

ST Microelectronics
6 Pages / 0.1 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STS4DPF30 Documents

ST Microelectronics
STMICROELECTRONICS STS4DPF30L Dual MOSFET, Dual P Channel, 4A, -30V, 0.07Ω, 10V, 1V
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