STV300NH02L Datasheet PDF - ST Microelectronics

●The STV300NH02L is a STripFET™ III N-channel enhancement-mode Power MOSFET developed using unique Single Feature Size™ strip-based process. The process decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.

● RDS (ON) x Qg industry benchmark

● Conduction losses reduced

● Low profile, very low parasitic inductance

● Switching losses reduced

● -55 to 175°C Operating junction temperature range