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STW11NM80 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-247-3

Description:

TO-247 N-CH 800V 11A

Pictures:

3D Model

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Product Pictures

Documentation:

STW11NM80 Datasheet (22 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STW11NM80 Datasheet PDF (22 Pages)

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STW11NM80 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

800 V

Current Rating

11.0 A

Case/Package

TO-247-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.35 Ω

Polarity

N-Channel

Power Dissipation

150 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

5.50 A

Rise Time

17 ns

Input Capacitance (Ciss)

1630pF @25V(Vds)

Input Power (Max)

150 W

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

150W (Tc)

View Datasheet >

STW11NM80 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

15.75 mm

Size-Width

5.15 mm

Size-Height

20.15 mm

Operating Temperature

-65℃ ~ 150℃ (TJ)

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STW11NM80 Environmental

STW11NM80 Export Classifications

STW11NM80 Function Overview

STW11NM80 Documents

STW11NM80 Datasheet

ST Microelectronics

22 Pages / 0.88 MByte

STW11NM80 Other Datasheet PDF

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17 Pages / 0.18 MByte

STW11NM80 Notice File

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30 Pages / 0.31 MByte

STW11NM80 Other References

ST Microelectronics

1 Pages / 0.12 MByte

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