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Part Datasheet Search > MOSFETs > ST Microelectronics > STW19NM50N Datasheet PDF
STW19NM50N
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STW19NM50N Datasheet PDF (15 Pages)
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STW19NM50N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-Channel
Power Dissipation
110 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
14A
Rise Time
16 ns
Input Capacitance (Ciss)
1000pF @50V(Vds)
Input Power (Max)
110 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
110W (Tc)

STW19NM50N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
150℃ (TJ)

STW19NM50N Documents

ST Microelectronics
15 Pages / 0.69 MByte
ST Microelectronics
19 Pages / 0.69 MByte
ST Microelectronics
32 Pages / 0.51 MByte

STW19NM50 Documents

ST Microelectronics
TO-247 N-CH 500V 14A
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