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STW20NM60 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

High Voltage MOS

Case Package:

TO-247-3

Description:

TO-247 N-CH 600V 20A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

STW20NM60 Datasheet (18 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STW20NM60 Datasheet PDF (18 Pages)

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STW20NM60 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

650 V

Current Rating

20.0 A

Case/Package

TO-247-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.25 Ω

Polarity

N-Channel

Power Dissipation

192 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

20.0 A

Rise Time

20 ns

Input Capacitance (Ciss)

1500pF @25V(Vds)

Input Power (Max)

192 W

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

192W (Tc)

View Datasheet >

STW20NM60 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

150℃ (TJ)

View Datasheet >

STW20NM60 Environmental

STW20NM60 Function Overview

STW20NM60 Documents

STW20NM60 Datasheet

ST Microelectronics

18 Pages / 0.42 MByte

STW20NM60 Other Datasheet PDF

ST Microelectronics

19 Pages / 0.41 MByte

STW20NM60 Notice File

ST Microelectronics

30 Pages / 0.31 MByte

STW20NM60 Other References

ST Microelectronics

1 Pages / 0.12 MByte

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