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Part Datasheet Search > MOSFETs > ST Microelectronics > STW20NM60FD Datasheet PDF
STW20NM60FD
$ 2.355
STW20NM60FD Datasheet PDF (15 Pages)
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STW20NM60FD Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
20.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.26 Ω
Polarity
N-Channel
Power Dissipation
214 W
Threshold Voltage
4 V
Input Capacitance
1.30 nF
Gate Charge
37.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
20.0 A
Rise Time
12 ns
Input Capacitance (Ciss)
1300pF @25V(Vds)
Input Power (Max)
214 W
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
214W (Tc)

STW20NM60FD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

STW20NM60FD Documents

ST Microelectronics
15 Pages / 0.32 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
32 Pages / 0.51 MByte
ST Microelectronics
1 Pages / 0.12 MByte

STW20NM60 Documents

ST Microelectronics
TO-247 N-CH 600V 20A
ST Microelectronics
N-CHANNEL 600V 0.26Ω 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFET
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