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Part Datasheet Search > MOSFETs > ST Microelectronics > STW26NM50 Datasheet PDF
STW26NM50
$ 4.066
STW26NM50 Datasheet PDF (12 Pages)
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STW26NM50 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
30.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.12 Ω
Polarity
N-Channel
Power Dissipation
313 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
15 ns
Input Capacitance (Ciss)
3000pF @25V(Vds)
Input Power (Max)
313 W
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
313W (Tc)

STW26NM50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
150℃ (TJ)

STW26NM50 Documents

ST Microelectronics
12 Pages / 0.54 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.12 MByte

STW26 Documents

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TO-247 N-CH 500V 30A
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N-channel 600V, 0.145Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
ST Microelectronics
N-CH 600V 20A
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TO-247 N-CH 600V 30A
ST Microelectronics
TO-247 N-CH 600V 20A
ST Microelectronics
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