STW47NM60ND Datasheet PDF - ST Microelectronics

●Description

●This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

●■ The worldwide best RDS(on)

●area amongst the fast recovery diode devices

●■ 100% avalanche tested

●■ Low input capacitance and gate charge

●■ Low gate input resistance

●■ Extremely high dv/dt and avalanche capabilities.

●Application

●■ Switching applications

●– Automotive