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Part Datasheet Search > High Voltage MOS > ST Microelectronics > STW48N60DM2 Datasheet PDF
STW48N60DM2
$ 2.274
STW48N60DM2 Datasheet PDF (26 Pages)
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STW48N60DM2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.065 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
27 ns
Input Capacitance (Ciss)
3250pF @100V(Vds)
Fall Time
9.8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

STW48N60DM2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STW48N60DM2 Documents

ST Microelectronics
26 Pages / 0.29 MByte
ST Microelectronics
12 Pages / 0.58 MByte

STW48N60 Documents

ST Microelectronics
Trans MOSFET N-CH 650V 42A 3Pin TO-247 Tube
ST Microelectronics
TO-247 N-CH 600V 42A
ST Microelectronics
STMICROELECTRONICS STW48N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 40A, 600V, 0.065Ω, 10V, 4V
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