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Part Datasheet Search > MOSFETs > ST Microelectronics > STW48NM60N Datasheet PDF
STW48NM60N
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STW48NM60N Datasheet PDF (2 Pages)
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STW48NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.055 Ω
Polarity
N-Channel
Power Dissipation
255 W
Threshold Voltage
3.2 V
Input Capacitance
4285 pF
Drain to Source Voltage (Vds)
600 V
Rise Time
18 ns
Input Capacitance (Ciss)
4285pF @50V(Vds)
Input Power (Max)
255 W
Fall Time
25.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
330W (Tc)

STW48NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
150℃ (TJ)

STW48NM60N Documents

ST Microelectronics
2 Pages / 0.07 MByte
ST Microelectronics
13 Pages / 0.69 MByte
ST Microelectronics
32 Pages / 0.51 MByte

STW48NM60 Documents

ST Microelectronics
STMICROELECTRONICS STW48NM60N Power MOSFET, N Channel, 39A, 600V, 0.055Ω, 10V, 3.2V
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