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Part Datasheet Search > MOSFETs > ST Microelectronics > STW55NM60ND Datasheet PDF
STW55NM60ND
$ 13.771
STW55NM60ND Datasheet PDF (12 Pages)
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STW55NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.047 Ω
Polarity
N-Channel
Power Dissipation
350 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
68 ns
Input Capacitance (Ciss)
5800pF @50V(Vds)
Input Power (Max)
350 W
Fall Time
96 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350W (Tc)

STW55NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
150℃ (TJ)

STW55NM60ND Documents

ST Microelectronics
12 Pages / 0.28 MByte
ST Microelectronics
12 Pages / 0.22 MByte
ST Microelectronics
32 Pages / 0.51 MByte

STW55NM60 Documents

ST Microelectronics
N-channel 600V, 0.047Ω, 51A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
ST Microelectronics
TO-247 N-CH 600V 51A
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