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Part Datasheet Search > High Voltage MOS > ST Microelectronics > STW56N60DM2 Datasheet PDF
STW56N60DM2
$ 8.524
STW56N60DM2 Datasheet PDF (17 Pages)
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STW56N60DM2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.052 Ω
Polarity
N-Channel
Power Dissipation
360 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
50A
Rise Time
60 ns
Input Capacitance (Ciss)
4100pF @100V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
360W (Tc)

STW56N60DM2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STW56N60DM2 Documents

ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
12 Pages / 0.38 MByte
ST Microelectronics
3 Pages / 0.11 MByte

STW56N60 Documents

ST Microelectronics
TO-247 N-CH 600V 50A
ST Microelectronics
TO-247 N-CH 600V 52A
ST Microelectronics
TO-247 N-CH 600V 52A
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