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Part Datasheet Search > High Voltage MOS > ST Microelectronics > STW70N60DM2 Datasheet PDF
STW70N60DM2
$ 3.118
STW70N60DM2 Datasheet PDF (13 Pages)
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STW70N60DM2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.037 Ω
Polarity
N-Channel
Power Dissipation
446 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
67 ns
Input Capacitance (Ciss)
5508pF @100V(Vds)
Fall Time
10.4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
446W (Tc)

STW70N60DM2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STW70N60DM2 Documents

ST Microelectronics
13 Pages / 0.57 MByte
ST Microelectronics
20 Pages / 1.08 MByte
ST Microelectronics
12 Pages / 0.7 MByte
ST Microelectronics
3 Pages / 0.11 MByte

STW70N60 Documents

ST Microelectronics
TO-247 N-CH 600V 68A
ST Microelectronics
Power MOSFET, N Channel, 66A, 600V, 0.037Ω, 10V, 4V
ST Microelectronics
MOS Power Transistors HV (>= 200V)
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