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Part Datasheet Search > MOSFETs > ST Microelectronics > STY60NM50 Datasheet PDF
STY60NM50
$ 0.261
STY60NM50 Datasheet PDF (8 Pages)
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STY60NM50 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
60.0 A
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.05 Ω
Polarity
N-Channel
Power Dissipation
560 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
58 ns
Input Capacitance (Ciss)
7500pF @25V(Vds)
Input Power (Max)
560 W
Fall Time
46 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
560W (Tc)

STY60NM50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
5.3 mm
Operating Temperature
150℃ (TJ)

STY60NM50 Documents

ST Microelectronics
8 Pages / 0.2 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
21 Pages / 0.38 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STY60 Documents

ST Microelectronics
Max247 N-CH 300V 60A
ST Microelectronics
STMICROELECTRONICS STY60NM50 MOSFET Transistor, N Channel, 60A, 500V, 50mohm, 10V, 4V
ST Microelectronics
Power MOSFET, N Channel, 30A, 600V, 0.05Ω, 30V, 4V
ST Microelectronics
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,60A I(D),TO-247VAR
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