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Part Datasheet Search > MOSFETs > ST Microelectronics > STY80NM60N Datasheet PDF
STY80NM60N
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STY80NM60N Datasheet PDF (12 Pages)
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STY80NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.03 Ω
Polarity
N-Channel
Power Dissipation
447 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
37.0 A
Rise Time
65 ns
Input Capacitance (Ciss)
10100pF @50V(Vds)
Input Power (Max)
447 W
Fall Time
200 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
447W (Tc)

STY80NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.9 mm
Size-Width
5.3 mm
Size-Height
20.3 mm
Operating Temperature
150℃ (TJ)

STY80NM60N Documents

ST Microelectronics
12 Pages / 0.34 MByte

STY80NM60 Documents

ST Microelectronics
Max247 N-CH 600V 74A
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