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SUD50P10-43L-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

TO-252-3

Description:

MOSFET P-CH 100V 37.1A TO252

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SUD50P10-43L-GE3 Datasheet (9 Pages)

Package Outline Dimension on7 Page

Part Numbering System on1 Page

SUD50P10-43L-GE3 Datasheet PDF (9 Pages)

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SUD50P10-43L-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

TO-252-3

Power Dissipation

8.3W (Ta), 136W (Tc)

Drain to Source Voltage (Vds)

100 V

Input Capacitance (Ciss)

4600pF @50V(Vds)

Power Dissipation (Max)

8.3W (Ta), 136W (Tc)

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SUD50P10-43L-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 175℃ (TJ)

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SUD50P10-43L-GE3 Environmental

SUD50P10-43L-GE3 Function Overview

SUD50P10-43L-GE3 Documents

SUD50P10-43L-GE3 Datasheet

Vishay Siliconix

9 Pages / 0.14 MByte

SUD50P10-43L-GE3 Other Datasheet PDF

Vishay Siliconix

9 Pages / 0.14 MByte

SUD50P10-43L-GE3 Drawing Diagrams

Vishay Siliconix

1 Pages / 0.04 MByte

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SUD50P10-43L-E3 Datasheet PDF

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SUD50P10-43L-GE3 Datasheet PDF

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SUD50P10-43L-GE3 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2

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