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Part Datasheet Search > MOSFETs > Vishay Siliconix > SUP85N03-04P-E3 Datasheet PDF
SUP85N03-04P-E3
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SUP85N03-04P-E3 Datasheet PDF (6 Pages)
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SUP85N03-04P-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
0.008 Ω
Power Dissipation
166 W
Input Capacitance
4500pF @25V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Thermal Resistance
0.9℃/W (RθJC)
Input Capacitance (Ciss)
4500pF @25V(Vds)
Fall Time
35 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.75W (Ta), 166W (Tc)

SUP85N03-04P-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Size-Length
10.51 mm
Size-Width
4.7 mm
Size-Height
15.49 mm
Operating Temperature
-55℃ ~ 175℃

SUP85N03-04P-E3 Documents

Vishay Siliconix
6 Pages / 0.08 MByte
Vishay Siliconix
3 Pages / 0.25 MByte
Vishay Siliconix
9 Pages / 0.22 MByte

SUP85N0304 Documents

Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ω; ID 85A; TO-220AB; PD 166W; VGS +/-20V
VISHAY
TO-220AB N-CH 30V 85A
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ω; ID 85A; TO-220AB; PD 166W; VGS +/-20V
VISHAY
TO-220AB N-CH 30V 85A
Vishay Intertechnology
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