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Part Datasheet Search > MOSFETs > VISHAY > SUP85N10-10 Datasheet PDF
SUP85N10-10
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SUP85N10-10 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220
Forward Voltage
1.00 V
Polarity
N-CH
Power Dissipation
250 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100V (min)
Continuous Drain Current (Ids)
85A
Rise Time
90.0 ns

SUP85N10-10 Size & Package

TYPE
DESCRIPTION
Packaging
Tube

SUP85N10-10 Documents

VISHAY
6 Pages / 0.1 MByte
VISHAY
6 Pages / 0.09 MByte

SUP85 Documents

VISHAY
TO-220-3 N-CH 100V 85A 10.5mΩ
Vishay Semiconductor
Trans MOSFET N-CH 100V 85A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 100V 85A 10.5mΩ
VISHAY
TO-220-3 N-CH 150V 85A 21mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ω; ID 85A; TO-220AB; PD 166W; VGS +/-20V
VISHAY
TO-220-3 N-CH 30V 85A 3.6mΩ
Vishay Siliconix
Trans MOSFET N-CH 100V 85A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220AB N-CH 30V 85A
Vishay Siliconix
Trans MOSFET N-CH 150V 85A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ω; ID 85A; TO-220AB; PD 166W; VGS +/-20V
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