TIP111G Datasheet PDF - ON Semiconductor

●The NPN TIP111G Darlington transistor from ON Semiconductor is the perfect solution when amplified current gain values are needed. This Darlington transistor array"s maximum emitter base voltage is 5 V. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.