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Part Datasheet Search > BJTs > ON Semiconductor > TIP111TU Datasheet PDF
TIP111TU
$ 0.509
TIP111TU Datasheet PDF (5 Pages)
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TIP111TU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
2 W
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
1000 @1A, 4V
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
50 W

TIP111TU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm
Operating Temperature
150℃ (TJ)

TIP111TU Documents

ON Semiconductor
5 Pages / 0.21 MByte
ON Semiconductor
7 Pages / 0.33 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
4 Pages / 0.56 MByte

TIP111 Documents

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TRANS NPN DARL 80V 2A TO-220
Harris
Transistor
NTE Electronics
t-Npn Si- Po Darlington
CJ
TO-220-3L NPN 80V 2000mA
Microsemi
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-220, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN
Taitron
Darlington Power Transistors (NPN)
Samsung
80V, 2A, NPN epitaxial silicon darlington transistor
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