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Part Datasheet Search > BJTs > ON Semiconductor > TIP141G Datasheet PDF
TIP141G
$ 0.639

TIP141G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-247-3
Description:
TO-247 NPN 80V 10A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
TIP141G Datasheet (8 Pages)
Package Outline Dimension on7 Page
Part Numbering System on1 Page2 Page8 Page
TIP141G Datasheet PDF (8 Pages)
View Datasheet
Click page to view the detail

TIP141G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
10.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
125 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
10A
hFE Min
1000 @5A, 4V
hFE Max
500 @10A, 4V
Input Power (Max)
125 W
DC Current Gain (hFE)
500
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
125000 mW
View Datasheet >

TIP141G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.2 mm
Size-Width
4.9 mm
Size-Height
12.2 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)
View Datasheet >

TIP141G Documents

TIP141G Datasheet
ON Semiconductor
8 Pages / 0.13 MByte
TIP141G Other Datasheet PDF
ON Semiconductor
5 Pages / 0.25 MByte
TIP141G Drawing Diagrams
ON Semiconductor
2 Pages / 0.06 MByte
TIP141G Notice File
ON Semiconductor
5 Pages / 0.45 MByte

TIP141 Documents

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Central Semiconductor
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Motorola
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60–100 VOLTS 125W
TIP141 Datasheet PDF
NTE Electronics
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TI
80V, 10A, 125W, NPN darlington-connected silicon power transistor
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Mospec
POWER TRANSISTORS(10A,60-100V,125W)
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Samsung
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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