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Part Datasheet Search > BJTs > ST Microelectronics > TIP35CP Datasheet PDF
TIP35CP
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TIP35CP Datasheet PDF (9 Pages)
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TIP35CP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
3 MHz
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
125 W
Gain Bandwidth Product
3 MHz
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
25A
hFE Min
10 @15A, 4V
Input Power (Max)
125 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
125000 mW

TIP35CP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.8 mm
Size-Width
5 mm
Size-Height
18.7 mm
Operating Temperature
150℃ (TJ)

TIP35CP Documents

ST Microelectronics
9 Pages / 0.18 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
2 Pages / 0.14 MByte
ST Microelectronics
3 Pages / 0.11 MByte

TIP35 Documents

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25 A, 100 V NPN Bipolar Power Transistor, TO-247, 30-TUBE
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25A, 40V, NPN, Si, POWER TRANSISTOR, TO-218
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KEC(Korea Electronics)
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N), 3 PIN
Microsemi
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin, TO-254, 3 PIN
Advanced Semiconductor
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin, TO-247, 3 PIN
Bourns J.W. Miller
Npn Transistor 40V 25A
Mospec
POWER TRANSISTORS(25A,40-100V,125W)
Central Semiconductor
COMPLEMENTARY SILICON POWER TRANSISTORS
TI
25A, 40V, NPN, Si, POWER TRANSISTOR
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