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TIP47G
$ 0.667
TIP47G Datasheet PDF (6 Pages)
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TIP47G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
10 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
250 V
Current Rating
1.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
40 W
Breakdown Voltage (Collector to Emitter)
250 V
Thermal Resistance
3.125℃/W (RθJC)
Continuous Collector Current
1A
hFE Min
30 @300mA, 10V
Input Power (Max)
2 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
40000 mW

TIP47G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-65℃ ~ 150℃

TIP47G Documents

ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
5 Pages / 0.15 MByte

TIP47 Documents

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Trans GP BJT NPN 250V 1A 40000mW Automotive 3Pin(3+Tab) TO-220AB Bag
Multicomp
MULTICOMP TIP47 Bipolar (BJT) Single Transistor, NPN, 250V, 10MHz, 40W, 1A, 30
Bourns J.W. Miller
Trans GP BJT NPN 250V 1A 3Pin(3+Tab) TO-220
Central Semiconductor
TRANS NPN 250V 1A TO220
Harris
Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Motorola
POWER TRANSISTORS NPN SILICON
Mospec
POWER TRANSISTORS(1A,250-400V,40W)
Taitron
NPN High Voltage Power Transistors
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