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Part Datasheet Search > MOSFETs > Toshiba > TK100E10N1,S1X Datasheet PDF
TK100E10N1,S1X
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TK100E10N1,S1X Datasheet PDF (9 Pages)
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TK100E10N1,S1X Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
255 W
Drain to Source Voltage (Vds)
100 V
Rise Time
32 ns
Input Capacitance (Ciss)
8800pF @50V(Vds)
Fall Time
45 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
255W (Tc)

TK100E10N1,S1X Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
150℃ (TJ)

TK100E10N1,S1X Documents

Toshiba
9 Pages / 0.24 MByte

TK100E10N1S1 Documents

Toshiba
TO-220 N-CH 100V 207A
Toshiba
Trans MOSFET N-CH 100V 207A 3Pin TO-220
Toshiba
Trans MOSFET N-CH 100V 207A 3-Pin TO-220 Tube
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