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Part Datasheet Search > MOSFETs > Toshiba > TK10E60W,S1VX(S Datasheet PDF
TK10E60W,S1VX(S
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TK10E60W,S1VX(S Datasheet PDF (10 Pages)
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TK10E60W,S1VX(S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
100 W
Drain to Source Voltage (Vds)
600 V
Rise Time
22 ns
Input Capacitance (Ciss)
700pF @300V(Vds)
Fall Time
5.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
100 W

TK10E60W,S1VX(S Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Material
Silicon
Size-Length
10.16 mm
Size-Width
4.45 mm
Size-Height
15.1 mm

TK10E60W,S1VX(S Documents

Toshiba
10 Pages / 0.24 MByte
Toshiba
10 Pages / 0.23 MByte

TK10E60WS1 Documents

Toshiba
Trans MOSFET N-CH 600V 9.7A 3Pin TO-220
Toshiba
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20NC
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