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Part Datasheet Search > MOSFETs > Toshiba > TK31J60W5,S1VQ Datasheet PDF
TK31J60W5,S1VQ
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TK31J60W5,S1VQ Datasheet PDF (10 Pages)
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TK31J60W5,S1VQ Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
230 W
Drain to Source Voltage (Vds)
600 V
Rise Time
80 ns
Input Capacitance (Ciss)
3000pF @300V(Vds)
Fall Time
8.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
230W (Tc)

TK31J60W5,S1VQ Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
150℃ (TJ)

TK31J60W5,S1VQ Documents

Toshiba
10 Pages / 0.23 MByte

TK31J60W5S1 Documents

Toshiba
Mosfet n-Ch 600V 30.8A To-3p(n)
Toshiba
Trans MOSFET N-CH 600V 30.8A 3Pin TO-3P(N) Tube
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