TLC082QDGNRQ1 Datasheet PDF - TI

●The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI"s BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

●Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.

●DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.