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TLP351H(D4-TP1,F) Datasheet PDF - Toshiba

Manufacturer:

Toshiba

Category:

MOSFETs

Case Package:

SMD-8

Description:

IGBT/MOSFET Gate Drive Coupler; High temperature 125℃; VDE

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TLP351H(D4-TP1,F) Datasheet PDF

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TLP351H(D4-TP1,F) Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

SMD-8

Rise/Fall Time

50 ns

Number of Channels

1 Channel

Forward Voltage

1.55 V

Power Dissipation

260 mW

Isolation Voltage

3750 Vrms

Forward Current

20 mA

Maximum Forward Voltage (Max)

1.7 V

Forward Current (Max)

20 mA

Fall Time (Max)

50 ns

Fall Time (Max)

50 ns

Operating Temperature (Max)

125 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

260 mW

TLP351H(D4-TP1,F) Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-40℃ ~ 125℃

TLP351H(D4-TP1,F) Environmental

TLP351H(D4-TP1,F) Function Overview

TLP351H(D4-TP1,F) Documents

TLP351H(D4-TP1,F) Other Datasheet PDF

Toshiba

21 Pages / 0.48 MByte

TLP351HD4TP1 Documents

TLP351H(D4-TP1,F) Datasheet PDF

Toshiba

IGBT/MOSFET Gate Drive Coupler; High temperature 125℃; VDE

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