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Part Datasheet Search > MOSFETs > VISHAY > TP0610K-T1-E3 Datasheet PDF
TP0610K-T1-E3
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TP0610K-T1-E3 Datasheet PDF (7 Pages)
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TP0610K-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
6 Ω
Polarity
P-Channel
Power Dissipation
0.35 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
-185 mA
Input Capacitance (Ciss)
23pF @25V(Vds)
Input Power (Max)
350 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350 mW

TP0610K-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
3000

TP0610K-T1-E3 Documents

VISHAY
7 Pages / 0.17 MByte
VISHAY
14 Pages / 0.17 MByte

TP0610KT1 Documents

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MOSFET P-CH 60V 185mA SOT23
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TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,185mA I(D),TO-236
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Transistor
Vishay Semiconductor
Trans MOSFET P-CH 60V 0.185A 3Pin SOT-23 T/R
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SOT-23-3P-CH 60V 185mA 10Ω
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SOT-23-3P-CH 60V 185mA 10Ω
Vishay Siliconix
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Vishay Siliconix
VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V
Vishay Semiconductor
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Vishay Semiconductor
MOSFET 60V -0.185A 350mW 10Ω @ 4.5V
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