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Part Datasheet Search > MOSFETs > Vishay Siliconix > TP0610K-T1-GE3 Datasheet PDF
TP0610K-T1-GE3
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TP0610K-T1-GE3 Datasheet PDF (8 Pages)
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TP0610K-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Power Dissipation
350mW (Ta)
Drain to Source Voltage (Vds)
60 V
Input Capacitance (Ciss)
23pF @25V(Vds)
Power Dissipation (Max)
350mW (Ta)

TP0610K-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 150℃ (TJ)

TP0610K-T1-GE3 Documents

Vishay Siliconix
8 Pages / 0.2 MByte
Vishay Siliconix
8 Pages / 0.2 MByte

TP0610KT1 Documents

Vishay Siliconix
MOSFET P-CH 60V 185mA SOT23
VISHAY
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,185mA I(D),TO-236
Vishay Intertechnology
Transistor
Vishay Semiconductor
Trans MOSFET P-CH 60V 0.185A 3Pin SOT-23 T/R
VISHAY
SOT-23-3P-CH 60V 185mA 10Ω
VISHAY
SOT-23-3P-CH 60V 185mA 10Ω
Vishay Siliconix
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Vishay Siliconix
VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V
Vishay Semiconductor
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Vishay Semiconductor
MOSFET 60V -0.185A 350mW 10Ω @ 4.5V
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