TTC5200 Datasheet PDF - Toshiba

●The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.

● Collector to emitter voltage (Vce) is 230V

● Collector to base voltage of 230V

● Collector current (Ic) is 15A

● Power dissipation (pd) is 150W

● Junction temperature of 150°C

● Current gain of 35 at 7A collector current

● Collector to emitter saturation voltage of 3V

● Collector to emitter breakdown voltage of 230V